IRF2204PBF mosfet equivalent, power mosfet.
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Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjma.
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IRF2204PbF
HEXFET® Power MOSFET
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Features
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Advanced Process Technology Ultra L.
This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.
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